doping profile meaning in English
掺杂分布图
掺杂剖视图
Examples
- A breakdown model of thin drift region ldmos with a step doping profile
器件多晶硅栅量子效应的解析模型 - It is represented the optimization and implementation of step drift doping profiles soi ldmos
Soi阶梯掺杂漂移区ldmos的优化设计与制备实验。 - In this thesis , the optimization of soi step drift doping profiles ldmos is addressed . the work of the author included the optimization of soi single - resurf ldmos and ; design and implementation of a step drift doping profiles soi ldmos
围绕soi阶梯掺杂ldmos器件的优化问题,本文从器件结构和工艺材料方面出发,借鉴已有理论,进行了soisingle - resurfldmos的优化研究以及soi阶梯掺杂漂移区ldmos的优化设计及器件制备实验。 - According to the thickness of the soi film , high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film . for thin - film soi - hvic , linear drift region doping profile is adopted to satisfy a certain breakdown - voltage , but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic , it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高压集成电路根据顶层硅厚度可分为厚膜和薄膜两大类。为了满足一定的击穿电压,薄膜soi高压电路一般采用漂移区线性掺杂技术,但其工艺复杂,且自热效应严重;而厚膜soi高压集成电路可以通过移植体硅cmos技术来实现高压,但是由于其硅膜较厚,介质隔离成为厚膜soi高压集成电路的关键技术。